Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.05.023
Abstract: Abstract The Hall Van-der-Pauw method is widely used to assess the electrical properties of GaSb based semiconductor layers. Semi-insulating GaSb substrates are not available, and therefore, Hall structures are generally grown on semi-insulating GaAs. The… read more here.
Keywords: gasb; epitaxial gasb; semi insulating; hall characterization ... See more keywords
Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates
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DOI: 10.3390/photonics8060215
Abstract: Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are… read more here.
Keywords: microscopy; molecular beam; beam epitaxy; grown molecular ... See more keywords