Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment
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DOI: 10.1063/1.5094159
Abstract: To determine the band alignment at the GaSb1-xBix/GaSb interface, a set of GaSb1-xBix/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi ≤ 12%) were grown by molecular beam epitaxy and investigated by… read more here.
Keywords: gasb1 xbix; band; gasb; xbix gasb ... See more keywords
Temperature-dependent ultrafast hot carrier dynamics in the dilute bismide alloy GaSb1−xBix (x ≾ 0.4%)
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DOI: 10.1063/5.0179135
Abstract: We report temperature-dependent hot carrier dynamics in liquid-phase epitaxy-grown GaSb1−xBix epilayers with dilute amounts of Bi (x ≾ 0.4%). Degenerate pump–probe (λ = 800 nm) transient reflectivity (PPTR) was used to investigate the carrier dynamics in the epilayers. The PPTR… read more here.
Keywords: hot carrier; carrier dynamics; carrier; gasb1 xbix ... See more keywords