In situ determination of the growth conditions of GaSbBi alloys
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DOI: 10.1016/j.jcrysgro.2018.05.010
Abstract: Abstract We have grown by molecular-beam epitaxy (MBE) GaSb1−xBix layers at different temperatures and fluxes to observe their influence on the Bi incorporation rate. All growth runs were monitored by in situ reflection high-energy electron… read more here.
Keywords: situ determination; growth conditions; determination growth; conditions gasbbi ... See more keywords
Epitaxial phases of high Bi content GaSbBi alloys
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DOI: 10.1016/j.jcrysgro.2019.03.028
Abstract: Abstract GaSbBi alloys have recently emerged as attractive materials for mid-infrared optoelectronics owing to strong band gap reduction enabled by Bi incorporation into the GaSb matrix. The fundamental understanding of the epitaxial process required to… read more here.
Keywords: gasbbi; epitaxial phases; content gasbbi; incorporation ... See more keywords