Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System
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DOI: 10.3390/ma15113768
Abstract: The chemical vapour deposition (CVD) technique could be used to fabricate a silicon carbide (SiC) epitaxial layer. Methyltrichlorosilane (CH3SiCl3, MTS) is widely used as a precursor for CVD of SiC with a wide range of… read more here.
Keywords: growth; kinetic mechanisms; deposition; gaseous system ... See more keywords