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   Articles with "gate" as a keyword



Pulsed Gate Switching of MoS2 Field‐Effect Transistor Based on Flexible Polyimide Substrate for Ultrasonic Detectors

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recommendations! Published in 2020 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202007389

Abstract: Molybdenum disulfide (MoS2) semiconductors have closely been studied for potential applications in detectors, optoelectronics, and flexible electronics due to its high electrical and robust mechanical performance. Herein, the first experimental study of the high‐speed ultrasound… read more here.

Keywords: gate; effect transistor; high speed; field effect ... See more keywords

Increased Static Charge‐Induced Threshold Voltage Shifts and Memristor Activity in Pentacene OFETs Comprising Polystyrene‐Based Gate Dielectrics Containing Electroactive Small Molecule Crystallites

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recommendations! Published in 2024 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202410763

Abstract: Top‐contact bottom‐gate pentacene OFETs are fabricated with single layer dielectrics comprised of either polystyrene (PS), poly(4‐methylstyrene) (P4MS), or poly(4‐tert‐butylstyrene) (P4TBS). The polystyrenes are blended with varying concentrations of two different small molecules, dibenzotetrathiafulvalene (DBTTF) and… read more here.

Keywords: memristor; gate; threshold voltage; memristor activity ... See more keywords

Electrically Reconfigurable Organic Logic Gates: A Promising Perspective on a Dual‐Gate Antiambipolar Transistor

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recommendations! Published in 2022 at "Advanced Materials"

DOI: 10.1002/adma.202109491

Abstract: Electrically reconfigurable organic logic circuits are promising candidates for realizing new computation architectures, such as artificial intelligence and neuromorphic devices. In this study, multiple logic gate operations are attained based on a dual‐gate organic antiambipolar… read more here.

Keywords: transistor; organic logic; logic gate; reconfigurable organic ... See more keywords

Effect of the Degree of the Gate‐Dielectric Surface Roughness on the Performance of Bottom‐Gate Organic Thin‐Film Transistors

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recommendations! Published in 2020 at "Advanced Materials Interfaces"

DOI: 10.1002/admi.201902145

Abstract: Organic thin-film transistors (TFTs) are promising devices to be employed in future flexible, large-area electronics applications, such as active-matrix displays and sensor arrays.[1–3] The possibility to deposit organic semiconductors at relatively low temperatures makes it… read more here.

Keywords: gate dielectric; surface roughness; performance; gate ... See more keywords

Tuning the Electrical State of 2DEG at LaVO3−KTaO3 Interface: Effect of Light and Electrostatic Gate

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recommendations! Published in 2020 at "Advanced Materials Interfaces"

DOI: 10.1002/admi.202000646

Abstract: Two‐dimensional electron gas (2DEG) formed at the interface of perovskite oxides has drawn considerable interest due to its rich underlying physics and potential in future generation spin‐electronic devices. Electrostatic gating and light illumination are two… read more here.

Keywords: gate; interface; electrostatic gate; lavo3 ktao3 ... See more keywords

Electrochemically and Mechanically Regulated Liquid Metal Gate via Giant Surface Tension Alteration

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recommendations! Published in 2021 at "Advanced Materials Interfaces"

DOI: 10.1002/admi.202100954

Abstract: Liquid gates can provide an effective method to control the release of substances. However, the size of liquid gates and the control methods limit their broad applications. The controllable large deformation of liquid metals (LMs)… read more here.

Keywords: gate; liquid; tension alteration; surface tension ... See more keywords

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

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recommendations! Published in 2024 at "Advanced Materials Interfaces"

DOI: 10.1002/admi.202301080

Abstract: Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing… read more here.

Keywords: regrown algan; regrowth; ohmic contacts; gate ... See more keywords

Long‐Range Non‐Coulombic Coupling at the LaAlO3/SrTiO3 Interface

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recommendations! Published in 2024 at "Advanced Materials Interfaces"

DOI: 10.1002/admi.202400223

Abstract: The LaAlO3/SrTiO3 interface hosts a plethora of gate‐tunable electronic phases. Gating of LaAlO3/SrTiO3 interfaces is usually assumed to occur electrostatically. However, increasing evidence suggests that non‐local interactions can influence and, in some cases, dominate the… read more here.

Keywords: non coulombic; gate; srtio3 interface; long range ... See more keywords

Rippled Metallic‐Nanowire/Graphene/Semiconductor Nanostack for a Gate‐Tunable Ultrahigh‐Performance Stretchable Phototransistor

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recommendations! Published in 2020 at "Advanced Optical Materials"

DOI: 10.1002/adom.202000859

Abstract: Despite being one of the most robust materials with intriguing optoelectronic properties, the practical use of single‐layer graphene (SLG) in soft‐electronic technologies is limited due to its poor native stretchability, low absorption coefficient, poor on/off… read more here.

Keywords: gate; graphene; semiconductor; gate tunable ... See more keywords

Breaking the Cut‐Off Wavelength Limit of GaTe through Self‐Driven Oxygen Intercalation in Air

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recommendations! Published in 2021 at "Advanced Science"

DOI: 10.1002/advs.202103429

Abstract: Abstract Low symmetric two dimensional (2D) semiconductors are of great significance for their potential applications in polarization‐sensitive photodetection and quantum information devices. However, their real applications are limited by their photo‐detecting wavelength ranges, which are… read more here.

Keywords: gate; driven oxygen; self driven; air ... See more keywords

Ultra‐Steep‐Slope High‐Gain MoS2 Transistors with Atomic Threshold‐Switching Gate

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recommendations! Published in 2022 at "Advanced Science"

DOI: 10.1002/advs.202104439

Abstract: The fundamental Boltzmann limitation dictates the ultimate limit of subthreshold swing (SS) to be 60 mV dec−1, which prevents the continued scaling of supply voltage. With atomically thin body, 2D semiconductors provide new possibilities for… read more here.

Keywords: high gain; steep slope; mos2; mos2 transistors ... See more keywords