Pulsed Gate Switching of MoS2 Field‐Effect Transistor Based on Flexible Polyimide Substrate for Ultrasonic Detectors
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202007389
Abstract: Molybdenum disulfide (MoS2) semiconductors have closely been studied for potential applications in detectors, optoelectronics, and flexible electronics due to its high electrical and robust mechanical performance. Herein, the first experimental study of the high‐speed ultrasound… read more here.
Keywords: gate; effect transistor; high speed; field effect ... See more keywords
Electrically Reconfigurable Organic Logic Gates: A Promising Perspective on a Dual‐Gate Antiambipolar Transistor
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202109491
Abstract: Electrically reconfigurable organic logic circuits are promising candidates for realizing new computation architectures, such as artificial intelligence and neuromorphic devices. In this study, multiple logic gate operations are attained based on a dual‐gate organic antiambipolar… read more here.
Keywords: transistor; organic logic; logic gate; reconfigurable organic ... See more keywords
Effect of the Degree of the Gate‐Dielectric Surface Roughness on the Performance of Bottom‐Gate Organic Thin‐Film Transistors
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.201902145
Abstract: Organic thin-film transistors (TFTs) are promising devices to be employed in future flexible, large-area electronics applications, such as active-matrix displays and sensor arrays.[1–3] The possibility to deposit organic semiconductors at relatively low temperatures makes it… read more here.
Keywords: gate dielectric; surface roughness; performance; gate ... See more keywords
Tuning the Electrical State of 2DEG at LaVO3−KTaO3 Interface: Effect of Light and Electrostatic Gate
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202000646
Abstract: Two‐dimensional electron gas (2DEG) formed at the interface of perovskite oxides has drawn considerable interest due to its rich underlying physics and potential in future generation spin‐electronic devices. Electrostatic gating and light illumination are two… read more here.
Keywords: gate; interface; electrostatic gate; lavo3 ktao3 ... See more keywords
Electrochemically and Mechanically Regulated Liquid Metal Gate via Giant Surface Tension Alteration
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202100954
Abstract: Liquid gates can provide an effective method to control the release of substances. However, the size of liquid gates and the control methods limit their broad applications. The controllable large deformation of liquid metals (LMs)… read more here.
Keywords: gate; liquid; tension alteration; surface tension ... See more keywords
Rippled Metallic‐Nanowire/Graphene/Semiconductor Nanostack for a Gate‐Tunable Ultrahigh‐Performance Stretchable Phototransistor
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Optical Materials"
DOI: 10.1002/adom.202000859
Abstract: Despite being one of the most robust materials with intriguing optoelectronic properties, the practical use of single‐layer graphene (SLG) in soft‐electronic technologies is limited due to its poor native stretchability, low absorption coefficient, poor on/off… read more here.
Keywords: gate; graphene; semiconductor; gate tunable ... See more keywords
Breaking the Cut‐Off Wavelength Limit of GaTe through Self‐Driven Oxygen Intercalation in Air
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Science"
DOI: 10.1002/advs.202103429
Abstract: Abstract Low symmetric two dimensional (2D) semiconductors are of great significance for their potential applications in polarization‐sensitive photodetection and quantum information devices. However, their real applications are limited by their photo‐detecting wavelength ranges, which are… read more here.
Keywords: gate; driven oxygen; self driven; air ... See more keywords
Ultra‐Steep‐Slope High‐Gain MoS2 Transistors with Atomic Threshold‐Switching Gate
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202104439
Abstract: The fundamental Boltzmann limitation dictates the ultimate limit of subthreshold swing (SS) to be 60 mV dec−1, which prevents the continued scaling of supply voltage. With atomically thin body, 2D semiconductors provide new possibilities for… read more here.
Keywords: high gain; steep slope; mos2; mos2 transistors ... See more keywords
Untethered Soft Microrobots with Adaptive Logic Gates
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Science"
DOI: 10.1002/advs.202206662
Abstract: Integrating adaptative logic computation directly into soft microrobots is imperative for the next generation of intelligent soft microrobots as well as for the smart materials to move beyond stimulus‐response relationships and toward the intelligent behaviors… read more here.
Keywords: logic gates; untethered soft; soft microrobots; microrobots adaptive ... See more keywords
A Graphene‐Based Filament Transistor with Sub‐10 mVdec−1 Subthreshold Swing
Sign Up to like & getrecommendations! Published in 2018 at "Advanced electronic materials"
DOI: 10.1002/aelm.201700608
Abstract: DOI: 10.1002/aelm.201700608 gap structure cannot be able to integrate in vertical direction. In 2008, Salahuddin et al.[8] proposed negative capacitance transistor using the polarization change induced abrupt switch with steep slope (Figure 1b). But at… read more here.
Keywords: filament transistor; graphene; gate; steep slope ... See more keywords
Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202000395
Abstract: 2D transition metal dichalcogenides (TMDs) are promising semiconductive films for applications in future devices due to their prosperous and tunable band structures. However, most TMD‐based top gate transistors suffer from a significant doping effect in… read more here.
Keywords: gate; channel doping; field effect; effect ... See more keywords