Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00805-7
Abstract: This paper presents a comprehensive TCAD based assessment to evaluate the intrinsic gain and minimum noise figure metrics of the T – Gate, and the π – Gate AlGaN/AlN/GaN HEMTs along with their recessed architectures.… read more here.
Keywords: algan aln; aln gan; gain; gan hemts ... See more keywords
Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures
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DOI: 10.1063/5.0038705
Abstract: In this work, a layer of graphene is inserted into Al2O3/recessed gate AlGaN/GaN structures to realize the positive shift of flatband voltage VFB. With a chemically inert surface and a high work function, graphene suppresses… read more here.
Keywords: gan structures; recessed gate; algan gan; gate ... See more keywords
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs
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DOI: 10.1109/ted.2018.2828702
Abstract: We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p-GaN gate devices and device simulations. We find that,… read more here.
Keywords: voltage; threshold voltage; algan gan; gan gate ... See more keywords
Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
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DOI: 10.3390/mi11020163
Abstract: In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm remaining… read more here.
Keywords: barrier; recessed gate; algan barrier; algan gan ... See more keywords