Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00805-7
Abstract: This paper presents a comprehensive TCAD based assessment to evaluate the intrinsic gain and minimum noise figure metrics of the T – Gate, and the π – Gate AlGaN/AlN/GaN HEMTs along with their recessed architectures.… read more here.
Keywords: algan aln; aln gan; gain; gan hemts ... See more keywords
Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0038705
Abstract: In this work, a layer of graphene is inserted into Al2O3/recessed gate AlGaN/GaN structures to realize the positive shift of flatband voltage VFB. With a chemically inert surface and a high work function, graphene suppresses… read more here.
Keywords: gan structures; recessed gate; algan gan; gate ... See more keywords
Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors
Sign Up to like & getrecommendations! Published in 2024 at "Journal of Applied Physics"
DOI: 10.1063/5.0200487
Abstract: In this paper, the p-GaN gate AlGaN/GaN high electron mobility transistors (HEMTs) with varying combinations of gate metal work function and gate geometry are fabricated and investigate the influence of gate leakage current (IGS) on… read more here.
Keywords: gan high; algan gan; gate; geometry ... See more keywords
Gate leakage mechanisms caused by 60Co gamma irradiation on p-GaN gate AlGaN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0287320
Abstract: This study investigates the impact of 60Co γ-ray irradiation on the gate leakage mechanism of Schottky-type p-GaN gate AlGaN/GaN HEMTs. Devices with breakdown voltage of 650 V were irradiated with 60Co γ-ray at a gate bias… read more here.
Keywords: irradiation; gate leakage; gate; gate algan ... See more keywords
A novel method to determine the conduction channel effective width of split-gate AlGaN/GaN high electron mobility transistors
Sign Up to like & getrecommendations! Published in 2025 at "AIP Advances"
DOI: 10.1063/5.0304323
Abstract: In this study, split-gate AlGaN/GaN high electron mobility transistors (HEMTs) with a hollow-gate structure were designed. The measurement and analysis of the samples showed that the influence of polarization Coulomb field scattering could be greatly… read more here.
Keywords: split gate; algan gan; gate algan; conduction ... See more keywords
Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs
Sign Up to like & getrecommendations! Published in 2025 at "Materials Research Express"
DOI: 10.1088/2053-1591/adb08f
Abstract: The objective of this study is to optimize the trade-off between threshold voltage (VTH) and maximum drain current (ID,max) in recessed gate AlGaN/GaN metal insulator semiconductor high electron mobility transistor (MISHEMT) using atomic layer etching… read more here.
Keywords: algan barrier; normally recessed; algan gan; gate algan ... See more keywords
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2828702
Abstract: We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p-GaN gate devices and device simulations. We find that,… read more here.
Keywords: voltage; threshold voltage; algan gan; gan gate ... See more keywords
Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT
Sign Up to like & getrecommendations! Published in 2024 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2162-8777/ad49d6
Abstract: This study investigated threshold voltage (VTH) instability in a Schottky p-GaN gate AlGaN/GaN high-electron-mobility transistor (HEMT) by using the double pulse test (DPT) with a 1-µs pulse width in the ON-state and OFF-state. OFF-state drain… read more here.
Keywords: state drain; threshold voltage; gate algan; state ... See more keywords
Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
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DOI: 10.3390/mi11020163
Abstract: In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm remaining… read more here.
Keywords: barrier; recessed gate; algan barrier; algan gan ... See more keywords