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   Articles with "gate around" as a keyword



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A novel 2-D analytical model for the electrical characteristics of a gate-all-around heterojunction tunnel field-effect transistor including depletion regions

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recommendations! Published in 2020 at "Journal of Computational Electronics"

DOI: 10.1007/s10825-020-01503-8

Abstract: A new two-dimensional analytical model is proposed for the electrical attributes of a gate-all-around heterojunction tunnel field-effect transistor, including the potential distribution, lateral and vertical electric fields, drain current, subthreshold swing, and threshold voltage. The… read more here.

Keywords: analytical model; depletion regions; field; model ... See more keywords

Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure

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recommendations! Published in 2019 at "Nano Research"

DOI: 10.1007/s12274-019-2292-0

Abstract: AbstractUsing capacitance, conductance and noise measurements, we investigate the trapping behavior at the surface and in the core of triangular-shaped one-dimensional (1D) array of GaN nanowire gate-all-around field effect transistor (GAA FET), fabricated via a… read more here.

Keywords: surface core; gan nanowire; noise; nanowire gate ... See more keywords
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Center Potential Based Analysis of Si and III-V Gate all around Field Effect Transistors (GAA-FETs)

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recommendations! Published in 2020 at "Silicon"

DOI: 10.1007/s12633-020-00559-2

Abstract: In this brief, the center potential based analysis of Si and AlGaN/GaN gate all around field effect transistors (GAA-FET) is presented. The center potential is calculated for different values of channel length, channel height, doping… read more here.

Keywords: iii; potential based; gate around; center potential ... See more keywords

High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels

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recommendations! Published in 2025 at "Nano-Micro Letters"

DOI: 10.1007/s40820-025-01674-8

Abstract: A high-density array of orderly silicon nanowires (SiNWs) was grown in precise locations, with diameter of DNW = 22.4 ± 2.4 nm and interwire spacing of 90 nm. A special suspension-contact protocol has been developed… read more here.

Keywords: around field; high performance; performance; field effect ... See more keywords

Use of high order precursors for manufacturing gate all around devices

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recommendations! Published in 2017 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2016.10.044

Abstract: Abstract Epitaxial growth of strained and defect free SiGe layers grown with disilane and digermane was investigated. This precursors set allows to cover a broad range of Ge concentration (15–65%) at low temperatures (400–550 °C). It… read more here.

Keywords: growth; gate around; growth rate; sige growth ... See more keywords

Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study

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recommendations! Published in 2020 at "Results in physics"

DOI: 10.1016/j.rinp.2019.102823

Abstract: Abstract In this paper, we consider the electrical performance of a circular cross section gate all around-field effect transistor (GAA-FET) in which gate dielectric coverage with high-k dielectric (HfO2) over the channel region has been… read more here.

Keywords: around field; gate; coverage; effect transistor ... See more keywords
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Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires

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recommendations! Published in 2017 at "Solid-state Electronics"

DOI: 10.1016/j.sse.2016.12.008

Abstract: Abstract A vertical MOS architecture implemented on Si nanowire (NW) array with a scaled Gate-All-Around (14 nm) and symmetrical diffusive S/D contacts is presented with noteworthy demonstrations in both processing (layer engineering at nanoscale), and in… read more here.

Keywords: around field; transistors vertical; sub gate; effect transistors ... See more keywords

GIDL analysis of the process variation effect in gate-all-around nanowire FET

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recommendations! Published in 2017 at "Solid-state Electronics"

DOI: 10.1016/j.sse.2017.10.017

Abstract: Abstract In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to… read more here.

Keywords: nanowire fet; fet; gate; effect ... See more keywords

Current-voltage analytical model and multiobjective optimization of design of a short channel gate-all-around-junctionless MOSFET

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recommendations! Published in 2019 at "Solid-State Electronics"

DOI: 10.1016/j.sse.2019.107642

Abstract: Abstract In this paper we investigate the optimized design of a short channel gate-all-around-junctionless (GAAJ) metal-oxidesemiconductor field-effect-transistor (MOSFET), including the source-drain extensions, by means of genetic algorithm solutions applied to a compact current-voltage analytical model.… read more here.

Keywords: channel; channel gate; gate around; short channel ... See more keywords

Gate-All-Around Nanopore Osmotic Power Generators.

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recommendations! Published in 2024 at "ACS nano"

DOI: 10.1021/acsnano.4c01989

Abstract: Nanofluidic channels in a membrane represent a promising avenue for harnessing blue energy from salinity gradients, relying on permselectivity as a pivotal characteristic crucial for inducing electricity through diffusive ion transport. Surface charge emerges as… read more here.

Keywords: nanopore osmotic; osmotic power; ion; around nanopore ... See more keywords

Nanoscale Trench Gate Engineered JAM Gate-All-Around (TGE-JAM-GAA) Label-Free BioFET for Charged/Neutral Biomolecules Detection

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recommendations! Published in 2024 at "IETE Journal of Research"

DOI: 10.1080/03772063.2024.2368636

Abstract: In this manuscript, a Trench Gate Engineered Junctionless Accumulation Mode Gate-All-Around (TGE-JAM-GAA) BioFET structure has been proposed and critically analyzed for the label-free identification of biomolecules using extensive numerical device simulations. This device is superior… read more here.

Keywords: jam; tge jam; gate; jam gaa ... See more keywords