A novel 2-D analytical model for the electrical characteristics of a gate-all-around heterojunction tunnel field-effect transistor including depletion regions
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-020-01503-8
Abstract: A new two-dimensional analytical model is proposed for the electrical attributes of a gate-all-around heterojunction tunnel field-effect transistor, including the potential distribution, lateral and vertical electric fields, drain current, subthreshold swing, and threshold voltage. The… read more here.
Keywords: analytical model; depletion regions; field; model ... See more keywords
Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure
Sign Up to like & getrecommendations! Published in 2019 at "Nano Research"
DOI: 10.1007/s12274-019-2292-0
Abstract: AbstractUsing capacitance, conductance and noise measurements, we investigate the trapping behavior at the surface and in the core of triangular-shaped one-dimensional (1D) array of GaN nanowire gate-all-around field effect transistor (GAA FET), fabricated via a… read more here.
Keywords: surface core; gan nanowire; noise; nanowire gate ... See more keywords
Center Potential Based Analysis of Si and III-V Gate all around Field Effect Transistors (GAA-FETs)
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DOI: 10.1007/s12633-020-00559-2
Abstract: In this brief, the center potential based analysis of Si and AlGaN/GaN gate all around field effect transistors (GAA-FET) is presented. The center potential is calculated for different values of channel length, channel height, doping… read more here.
Keywords: iii; potential based; gate around; center potential ... See more keywords
Use of high order precursors for manufacturing gate all around devices
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2016.10.044
Abstract: Abstract Epitaxial growth of strained and defect free SiGe layers grown with disilane and digermane was investigated. This precursors set allows to cover a broad range of Ge concentration (15–65%) at low temperatures (400–550 °C). It… read more here.
Keywords: growth; gate around; growth rate; sige growth ... See more keywords
Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study
Sign Up to like & getrecommendations! Published in 2020 at "Results in physics"
DOI: 10.1016/j.rinp.2019.102823
Abstract: Abstract In this paper, we consider the electrical performance of a circular cross section gate all around-field effect transistor (GAA-FET) in which gate dielectric coverage with high-k dielectric (HfO2) over the channel region has been… read more here.
Keywords: around field; gate; coverage; effect transistor ... See more keywords
Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2016.12.008
Abstract: Abstract A vertical MOS architecture implemented on Si nanowire (NW) array with a scaled Gate-All-Around (14 nm) and symmetrical diffusive S/D contacts is presented with noteworthy demonstrations in both processing (layer engineering at nanoscale), and in… read more here.
Keywords: around field; transistors vertical; sub gate; effect transistors ... See more keywords
GIDL analysis of the process variation effect in gate-all-around nanowire FET
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.10.017
Abstract: Abstract In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to… read more here.
Keywords: nanowire fet; fet; gate; effect ... See more keywords
Current-voltage analytical model and multiobjective optimization of design of a short channel gate-all-around-junctionless MOSFET
Sign Up to like & getrecommendations! Published in 2019 at "Solid-State Electronics"
DOI: 10.1016/j.sse.2019.107642
Abstract: Abstract In this paper we investigate the optimized design of a short channel gate-all-around-junctionless (GAAJ) metal-oxidesemiconductor field-effect-transistor (MOSFET), including the source-drain extensions, by means of genetic algorithm solutions applied to a compact current-voltage analytical model.… read more here.
Keywords: channel; channel gate; gate around; short channel ... See more keywords
Design study of the gate-all-around silicon nanosheet MOSFETs
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DOI: 10.1088/1361-6641/ab6bab
Abstract: The gate-all-around (GAA) silicon nanosheet (SiNS) metal-oxide-semiconductor field-effect transistor (MOSFET) structures have been recognized as excellent candidates to achieve improved power performance and area scaling compared to the current FinFET technologies. Specifically, SiNS structures provide… read more here.
Keywords: short channel; gate; silicon nanosheet; gaa sins ... See more keywords
Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/abfbb5
Abstract: We report on the nanopatterning of horizontal and vertical germanium-tin (Ge1−x Sn x or GeSn) nanowires by inductively coupled plasma reactive ion etching for gate-all-around field effect transistors. First, a chlorine based chemistry has been… read more here.
Keywords: around field; gesn nanowires; plasma etching; gesn ... See more keywords
Model of GaSb-InAs p-i-n Gate All Around BioTunnel FET
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DOI: 10.1109/jsen.2018.2887277
Abstract: This paper investigates the role of a hetero-junction p-i-n gate all around tunnel FET architecture for biosensing applications. The device offers a better sensitivity and has been modeled in terms of various parameters such as… read more here.
Keywords: gasb inas; around biotunnel; gate; model gasb ... See more keywords