An insulated gate bipolar transistor with three-layer poly gate for improved figure of merit
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-020-04113-z
Abstract: In this study, an insulated gate bipolar transistor (IGBT) with three-layer poly gate is proposed and investigated by TCAD simulation. Here, gate is spilt in two different workfunction materials of N+ poly (ϕg\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym}… read more here.
Keywords: usepackage; layer; insulated gate; gate bipolar ... See more keywords
A low-loss variable-doped trench-insulated gate bipolar transistor with reduced on-state voltage
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/abf909
Abstract: The performance of a superjunction trench-insulated gate bipolar transistor with variable vertical doping in the epitaxial region along with variation in the collector layer is investigated. The concept of vertical variation transfers the avalanche multiplication… read more here.
Keywords: voltage; bipolar transistor; insulated gate; trench insulated ... See more keywords
Online Degradation State Assessment Methodology for Multi-Mode Failures of Insulated Gate Bipolar Transistor
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.2984385
Abstract: Insulated-gate bipolar transistors (IGBTs) are one of the most vulnerable components that account for a significant fraction of inverter and converter failures. This paper conducts a degradation analysis of IGBTs using run-to-failure measurements. Online assessment… read more here.
Keywords: methodology; insulated gate; degradation state; gate bipolar ... See more keywords
Lifetime Estimation of Insulated Gate Bipolar Transistor Modules Using Two-Step Bayesian Estimation
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2017.2694158
Abstract: The reliability of the package of insulated gate bipolar transistor (IGBT) modules has been of great concern. Some fatigue-related failure mechanisms are commonly observed under power cycling conditions. An approach of a multi-step Bayesian estimation… read more here.
Keywords: lifetime estimation; estimation; bipolar transistor; insulated gate ... See more keywords
A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Magnetics"
DOI: 10.1109/tmag.2019.2946283
Abstract: With the continuous miniaturization and rapid increase in the power ratings of an insulated-gate bipolar transistor (IGBT), the exact junction temperature becomes one of the critical performance parameters in evaluating the reliability of the transistor.… read more here.
Keywords: insulated gate; model; bipolar transistor; gate bipolar ... See more keywords
Insulated-gate bipolar transistor junction temperature estimation based on ℋ ∞ robust controller in wind energy applications
Sign Up to like & getrecommendations! Published in 2019 at "Wind Engineering"
DOI: 10.1177/0309524x19877645
Abstract: This article presents lifetime estimation using robust control based on thermal path degradation condition of insulated-gate bipolar transistor wind power modules. Online measurements of the on-state voltage V C E ON are considered to be… read more here.
Keywords: gate bipolar; junction temperature; insulated gate; wind ... See more keywords