Strain-Tunable Electronic Properties and Band Alignments in GaTe/C2N Heterostructure: a First-Principles Calculation
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DOI: 10.1186/s11671-018-2708-x
Abstract: Recently, GaTe and C2N monolayers have been successfully synthesized and show fascinating electronic and optical properties. Such hybrid of GaTe with C2N may induce new novel physical properties. In this work, we perform ab initio… read more here.
Keywords: gate c2n; c2n heterostructure; vdw heterostructure; type ... See more keywords