Investigation of the Determining Factors for the “Mobility Boost” in High‐k‐Gated Transparent Oxide Semiconductor Thin‐Film Transistors
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202001037
Abstract: In metal‐oxide thin‐film transistors (TFTs), high‐k gate dielectrics often yield a higher electron mobility than SiO2. However, investigations regarding the mechanism of this high‐k “mobility boost” are relatively scarce. To explore this phenomenon, solution‐processed In2O3… read more here.
Keywords: mobility boost; gate capacitance; mobility; oxide semiconductor ... See more keywords
Spacer Engineering in Negative Capacitance FinFETs
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DOI: 10.1109/led.2019.2911104
Abstract: The spacer design of the negative-capacitance FinFET (NC-FinFET) is investigated by using Sentaurus technology computer-aided design (TCAD). The spacer affects not only the gate capacitance but also the drain current due to the additional gate… read more here.
Keywords: spacer engineering; finfet; negative capacitance; spacer ... See more keywords
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Express"
DOI: 10.35848/1882-0786/ab6ef8
Abstract: We propose a model for the gate capacitance of GaN-based trench-gate metal-oxide-semiconductor transistors, based on combined measurements, analytical calculations and TCAD simulations. The trench capacitance is found to be equivalent to four different capacitors, used… read more here.
Keywords: gan based; semiconductor; gate; capacitance gan ... See more keywords