2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.2991355
Abstract: 2.3 kV 4H-SiC split-gate (SG) planar accumulation-channel power MOSFETs have been successfully manufactured in a 6 inch commercial foundry with good parametric distributions. The measured electrical characteristics of these devices are compared with conventional ACCUFETs… read more here.
Keywords: split gate; power mosfets; gate charge; accumulation channel ... See more keywords