2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.2991355
Abstract: 2.3 kV 4H-SiC split-gate (SG) planar accumulation-channel power MOSFETs have been successfully manufactured in a 6 inch commercial foundry with good parametric distributions. The measured electrical characteristics of these devices are compared with conventional ACCUFETs… read more here.
Keywords: split gate; power mosfets; gate charge; accumulation channel ... See more keywords
Efficient Implementation of Boolean Logic Functions Using Double Gate Charge-Trapping Memory for In-Memory Computing
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3353703
Abstract: In this work, we have utilized a vertical double gate (DG) charge-trapping memory (CTM) to implement Boolean logic functions for in-memory computing (IMC). IMC architecture is an efficient and revolutionary computing paradigm that can overcome… read more here.
Keywords: boolean logic; logic functions; memory; gate charge ... See more keywords