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Published in 2023 at "Advanced materials"
DOI: 10.1002/adma.202211653
Abstract: Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor operation. Here, we show that exfoliated…
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Keywords:
magnetotransport electrostatic;
crps4;
semiconductor;
gate controlled ... See more keywords
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Published in 2019 at "ACS nano"
DOI: 10.1021/acsnano.8b08260
Abstract: We explore the electrical characteristics of TiS3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal-insulator transition…
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Keywords:
tis3 nanowire;
nanowire field;
controlled metal;
gate controlled ... See more keywords
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Published in 2017 at "Nature Communications"
DOI: 10.1038/ncomms14471
Abstract: Extensive evidence has shown that long-range charge transport can occur along double helical DNA, but active control (switching) of single-DNA conductance with an external field has not yet been demonstrated. Here we demonstrate conductance switching…
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Keywords:
dna;
gate controlled;
controlled conductance;
conductance ... See more keywords
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Published in 2020 at "Nanoscale"
DOI: 10.1039/d0nr04630b
Abstract: The interplay between various internal degrees of freedom of electrons is of fundamental importance for designing high performance electronic devices. A particular instance of this interplay can be observed in bilayer TMDs due to the…
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Keywords:
spin valley;
gate controlled;
valley layer;
controlled spin ... See more keywords
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1
Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr03676b
Abstract: Recently, disulfiram (DSF), approved by the FDA as an anti-alcoholic drug, has been proved as an effective antitumor drug after chelating with Cu2+. To overcome the shortage of intracellular Cu2+, we have constructed a dual…
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Keywords:
controlled intelligent;
dual gate;
dsf;
intelligent nanoreactor ... See more keywords
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Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0071218
Abstract: High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Landé g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computing. Indium Antimonide (InSb)…
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Keywords:
controlled supercurrent;
gate controlled;
insb;
josephson ... See more keywords
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1
Published in 2022 at "IEEE Transactions on Circuits and Systems II: Express Briefs"
DOI: 10.1109/tcsii.2022.3192616
Abstract: The gate-controlled memristor has evident advantages over the traditional 2-terminal memristor in the field of the application of quantified neural networks. Since it is difficult to realize the large-scale integration, developing a flexible emulator of…
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Keywords:
quantified neural;
model;
memristor;
gate controlled ... See more keywords
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Published in 2020 at "Optics express"
DOI: 10.1364/oe.381765
Abstract: Metasurfaces have proven their great application potentials in terahertz (THz) wave modulations. However, realizing an active metasurface retaining lensing functionality in the THz frequency regime is still highly desired. Here a metalens, featuring electrically tunable…
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Keywords:
gate controlled;
graphene;
terahertz focusing;
optics ... See more keywords
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Published in 2022 at "Optics express"
DOI: 10.1364/oe.475142
Abstract: In order to flexibly control the voltage-clamping capability of silicon controlled rectifiers (SCRs), this paper proposes a photoelectric gate-controlled SCR (PGCSCR). Equivalent circuits and technology computer aided design (TCAD) simulations are used to analyze how…
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Keywords:
silicon controlled;
voltage;
clamping voltage;
gate controlled ... See more keywords