Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202207901
Abstract: 2D semiconductors have emerged both as an ideal platform for fundamental studies and as promising channel materials in beyond‐silicon field‐effect‐transistors due to their outstanding electrical properties and exceptional tunability via external field. However, the lack… read more here.
Keywords: dielectrics semiconductors; outlook; dielectrics integration; integration electronics ... See more keywords
Ternary Gd Y O high k oxide films for next-generation gate dielectrics and their annealing temperature effects
Sign Up to like & getrecommendations! Published in 2019 at "Ceramics International"
DOI: 10.1016/j.ceramint.2019.02.140
Abstract: Abstract As the feature size of integrated circuits continues to shrink, the key challenge is to find suitable gate dielectric materials to replace SiO2 and HfO2 to reduce leakage current density. In this work, ternary… read more here.
Keywords: gate dielectrics; spectroscopy; current density; annealing temperature ... See more keywords
Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.05.091
Abstract: Abstract The microstructure, optical and electrical properties of sputtering-derived HfGdO high-k gate dielectric thin films as a function of the Gd doping content have been systematically investigated. X-ray diffraction (XRD) measurements have indicated that Gd… read more here.
Keywords: gate dielectrics; semiconductor; gate; density ... See more keywords
Photoactivated high-k lanthanum oxide-aluminum oxide (La2O3–Al2O3) alloy-type gate dielectrics for low-voltage-operating flexible transistors
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2020.155671
Abstract: Abstract Low-temperature-processable gate dielectrics with high dielectric constants, low leakage current, and good electrical/mechanical stabilities are largely pursued in diverse electronics including flexible transistors, wearable sensors, integrated logic circuits, and various optoelectronic devices. Here, we… read more here.
Keywords: gate dielectrics; lanthanum oxide; flexible transistors; oxide aluminum ... See more keywords
Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.104933
Abstract: Abstract A layer-by-layer, in-situ H2 plasma treatment in each cycle of atomic layer deposition, referred to as “atomic layer hydrogen bombardment” (ALHB), is applied to improve electrical properties of ZrO2 high-k gate dielectrics. The H2… read more here.
Keywords: gate dielectrics; layer; atomic layer; high gate ... See more keywords
Effect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs
Sign Up to like & getrecommendations! Published in 2021 at "Radiation Physics and Chemistry"
DOI: 10.1016/j.radphyschem.2021.109473
Abstract: Abstract The effects of high energy (57 MeV) proton irradiation on the electrical characteristics of AlGaN/GaN MISHEMTs were investigated. The MISHEMTs were fabricated with two different types of gate dielectrics, atomic layer deposited (ALD)-Al2O3 and plasma… read more here.
Keywords: algan gan; gate dielectrics; gate; high energy ... See more keywords
Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers.
Sign Up to like & getrecommendations! Published in 2019 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.9b13056
Abstract: In this study, ultralow 1/f noise organic thin-film transistors (OTFTs) based on parylene gate dielectrics modified with triptycene (Trip) modifiers were fabricated. The fabricated OTFTs showed the lowest 1/f noise level among those of previously… read more here.
Keywords: gate dielectrics; noise organic; gate; self assembled ... See more keywords
Fully solution-induced high performance indium oxide thin film transistors with ZrO: x high-k gate dielectrics
Sign Up to like & getrecommendations! Published in 2018 at "RSC Advances"
DOI: 10.1039/c8ra02108b
Abstract: Solution based deposition has been recently considered as a viable option for low-cost flexible electronics. In this context, research efforts have been increasingly focused on the development of suitable solution-processed materials for oxide based transistors.… read more here.
Keywords: gate dielectrics; induced high; performance; fully solution ... See more keywords
Polyimide-based gate dielectrics for high-performance organic thin film transistors
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Chemistry C"
DOI: 10.1039/c9tc02219h
Abstract: In this work, polyimide-based novel polymer dielectric materials, containing a cross-linkable olefin group and a long alkyl chain with biphenyl, were designed and synthesized by a mild chemical synthesis method to avoid thermal imidization so… read more here.
Keywords: polyimide based; gate dielectrics; performance organic; dielectrics high ... See more keywords