Sign Up to like & get
recommendations!
3
Published in 2023 at "IEEE Access"
DOI: 10.1109/access.2023.3270261
Abstract: A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding gate drive circuit is thus required. Several…
read more here.
Keywords:
drive circuit;
gate;
gate drive;
type ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2021 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2020.2986097
Abstract: The effect of the gate drive on the power-processing capacity of a hard-switched insulated-gate bipolar transistor (IGBT) in a bridge leg is investigated in this article. The performance of two active gate drive (AGD) techniques…
read more here.
Keywords:
gate drive;
power;
gate;
increase ... See more keywords
Sign Up to like & get
recommendations!
2
Published in 2023 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2022.3219402
Abstract: This paper presents a step-up DC-DC converter that uses a stepwise gate-drive technique to reduce the power FET gate-drive energy by 82%, allowing positive efficiency down to an input voltage of ±0.5 mV—the lowest input…
read more here.
Keywords:
energy;
gate drive;
drive;
converter ... See more keywords
Sign Up to like & get
recommendations!
0
Published in 2017 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2016.2573643
Abstract: This paper presents a high-temperature (HT) gate drive and protection circuit for Silicon–Carbide (SiC) power mosfets entirely built from commercial off-the-shelf HT discrete components. To estimate cost reduction, a brief comparison was made between the…
read more here.
Keywords:
gate drive;
temperature gate;
drive protection;
high temperature ... See more keywords
Sign Up to like & get
recommendations!
0
Published in 2017 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2016.2587340
Abstract: This paper proposes an active current source gate drive (ACSD) method based on voltage controlled current source(VCCS) feedback control strategy for high-power IGBTs. Unlike the common voltage source gate drive, the proposed ACSD method provides…
read more here.
Keywords:
gate drive;
control;
drive;
gate ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2017 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2016.2633658
Abstract: Insulated gate bipolar transistors (IGBTs) are usually connected in series to form high-voltage switches in power electronics applications. However, the series operation of IGBTs is not easy due to the unbalanced voltage sharing between them,…
read more here.
Keywords:
gate drive;
voltage;
gate;
series ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2021 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2020.3023638
Abstract: This article presents a cascaded gate drive power supply configuration to reduce the common mode (CM) current in phase-shifted full-bridge (PSFB) converters. In such converters, there are at least two $dV/dt$ sources generated at different…
read more here.
Keywords:
supply configuration;
power supply;
gate drive;
power ... See more keywords