Advanced gate driving concepts and switching optimization for SiC semiconductors
Sign Up to like & getrecommendations! Published in 2024 at "Automatika"
DOI: 10.1080/00051144.2024.2362525
Abstract: Silicon carbide (SiC) MOSFETS are increasingly favoured in power electronics for their improved properties compared to silicon-based counterparts, such as IGBTs. Their ability to operate at higher switching frequencies and execute faster switching transients is… read more here.
Keywords: gate driving; driving concepts; concepts switching; gate ... See more keywords
A Monolithic GaN Power IC With On-Chip Gate Driving, Level Shifting, and Temperature Sensing, Achieving Direct 48-V/1-V DC–DC Conversion
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Journal of Solid-State Circuits"
DOI: 10.1109/jssc.2022.3201781
Abstract: To unlock the full potential of monolithic gallium nitride (GaN) power integrated circuits, this article explores the feasibility of developing efficient and reliable on-chip gate driving and level shifting solutions, which fundamentally facilitate the on-chip… read more here.
Keywords: gan power; gate driving; level shifting; power ... See more keywords
Gate Driving Circuit for the All Solid-State Rectangular Marx Generator
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Plasma Science"
DOI: 10.1109/tps.2019.2923327
Abstract: Recent studies have shown that rectangular high-voltage pulses have a high-performance in dielectric barrier discharges (DBDs). To generate the rectangular pulses used in the Marx generators, the most common way is driving two sets of… read more here.
Keywords: gate driving; marx generator; driving circuit; circuit ... See more keywords