Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2025.3584809
Abstract: In this study, AlGaN/GaN high-electron-mobility-transistor (HEMTs) with a small gate length were fabricated using a stepper. Additionally, a novel gate fabrication process was conducted to shrink the gate head, thus reducing the parasitic capacitance of… read more here.
Keywords: gate fabrication; inline formula; novel gate; tex math ... See more keywords
Proximity Effect in Gate Fabrication Using Photolithography Technique
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DOI: 10.15598/aeee.v15i2.2024
Abstract: In the paper the technological factors influencing test structure gate length were described. The influence of test structure gate placement (Schottky metallization between ohmic contacts, on mesa and on GaN surface) was analyzed and discussed.… read more here.
Keywords: gate fabrication; gate; effect gate; test ... See more keywords