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1
Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5369-0
Abstract: Zinc oxide (ZnO) nanorods (NRs) were grown directly on printed circuit boards with a 35-μm-thick copper layer using a seedless galvanic-cell hydrothermal process. The hexagonal structure of the synthesized ZnO NRs was observed by scanning…
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Keywords:
gate field;
zno nrs;
zinc oxide;
effect ... See more keywords
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1
Published in 2022 at "Analytical chemistry"
DOI: 10.1021/acs.analchem.1c05164
Abstract: An amyloid-beta peptide (Aβ) is generally believed to be a pathological marker of Alzheimer's disease (AD), but it is still of great significance to explore the upstream and downstream relationship of Aβ in AD. It…
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Keywords:
field effect;
alzheimer disease;
extended gate;
effect transistor ... See more keywords
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1
Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.1c04737
Abstract: Multifunctional electronic devices that combine logic operation and data storage functions are of great importance in developing next-generation computation. The recent development of van der Waals (vdW) heterostructures based on various two-dimensional (2D) materials have…
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Keywords:
field effect;
floating gate;
van der;
der waals ... See more keywords
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Published in 2023 at "AIP Advances"
DOI: 10.1063/5.0141131
Abstract: Due to the limitations of the currently widely used von Neumann architecture-based computing system, research on various devices and circuit systems suitable for logic-in-memory computing applications has been conducted. In this work, the silicon-based floating…
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Keywords:
floating gate;
transistor;
circuit;
logic memory ... See more keywords
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Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa6c02
Abstract: This paper focuses on total ionizing dose (TID) effects induced in multiple-gate field-effect transistors. The impact of device architecture, geometry and scaling on the TID response of multiple-gate transistors is reviewed in both bulk and…
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Keywords:
gate field;
multiple gate;
total ionizing;
ionizing dose ... See more keywords
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Published in 2021 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/42/2/023102
Abstract: This work reviews the state-of-the art multi-gate field-effect transistor (MuGFET) process technologies and compares the device performance and reliability characteristics of the MuGFETs with the planar Si CMOS devices. Owing to the 3D wrapped gate…
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Keywords:
gate field;
multi gate;
effect;
process ... See more keywords
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1
Published in 2021 at "IEEE Sensors Journal"
DOI: 10.1109/jsen.2020.3027060
Abstract: In this article, the impact of post-deposition annealing (PDA) on the structural features and sensing properties of the NiOx sensing films deposited on a n+-type Si substrate was studied for an extended-gate field-effect transistor (EGFET)…
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Keywords:
field effect;
sensing films;
extended gate;
niox sensing ... See more keywords
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Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3000766
Abstract: We demonstrate novel analysis on electrical characteristics of ferroelectric-gate field effect transistor (FeFET), especially reverse DIBL (RDIBL) and negative differential resistance (NDR) phenomena through measurements of fabricated FeFETs and technology computer-aided design (TCAD) simulations. The…
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Keywords:
ferroelectric gate;
negative differential;
gate;
field effect ... See more keywords
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1
Published in 2022 at "Biosensors"
DOI: 10.3390/bios12010031
Abstract: C-reactive protein (CRP) is a non-specific biomarker of inflammation and may be associated with cardiovascular disease. In recent studies, systemic inflammatory responses have also been observed in cases of coronavirus disease 2019 (COVID-19). Molecularly imprinted…
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Keywords:
doped peptide;
reactive protein;
peptide imprinted;
extended gate ... See more keywords