Improved Performance of h-BN Encapsulated Double Gate Graphene Nanomesh Field Effect Transistor for Short Channel Length
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DOI: 10.1142/s0219581x1760016x
Abstract: This paper presents improved performance of Double Gate Graphene Nanomesh Field Effect Transistor (DG-GNMFET) with h-BN as substrate and gate oxide material. The DC characteristics of 0.95μm and 5nm channel length devices are studied for… read more here.
Keywords: double gate; gate graphene; improved performance; gate ... See more keywords