Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications
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DOI: 10.1016/j.spmi.2017.08.002
Abstract: Abstract In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at… read more here.
Keywords: gate; power; hemt; hemt algan ... See more keywords