Atomic Layer Deposited ZrxAl1−xOy Film as High κ Gate Insulator for High Performance ZnSnO Thin Film Transistor
Sign Up to like & getrecommendations! Published in 2018 at "Electronic Materials Letters"
DOI: 10.1007/s13391-018-0079-1
Abstract: In this work, the high κ ZrxAl1−xOy films with a different Zr concentration have been deposited by atomic layer deposition, and the effect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric… read more here.
Keywords: zrxal1 xoy; gate insulator; film; layer ... See more keywords
Impact of the post-thermal annealing on OFETs using printed contacts, printed organic gate insulator and evaporated C60 active layer
Sign Up to like & getrecommendations! Published in 2018 at "Solid-State Electronics"
DOI: 10.1016/j.sse.2018.10.011
Abstract: Abstract Towards fully printed organic electronics, bottom-gate, bottom contacts fullerene based organic FETs (OFETs) are fabricated using inkjet printing drop-on-demand technology for the deposition of gate contact, organic gate insulator and source and drain contacts.… read more here.
Keywords: post thermal; organic gate; gate; thermal annealing ... See more keywords
Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide.
Sign Up to like & getrecommendations! Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.6b13746
Abstract: Artificial synaptic thin film transistors (TFTs) capable of simultaneously manifesting signal transmission and self-learning are demonstrated using transparent zinc oxide (ZnO) in combination with high κ tantalum oxide as gate insulator. The devices exhibit pronounced… read more here.
Keywords: demonstrated using; zinc oxide; gate insulator; memory ... See more keywords
Interfacial pH Behavior at a Cell/Gate Insulator Nanogap Induced by Allergic Responses
Sign Up to like & getrecommendations! Published in 2019 at "ACS Omega"
DOI: 10.1021/acsomega.9b01872
Abstract: In this paper, we clarify the interfacial pH behavior induced by allergic responses at a mast cell/gate insulator nanogap detected by laser scanning confocal fluorescence microscopy. In a previous work, the change in interfacial pH… read more here.
Keywords: allergic responses; gate insulator; mast cell; cell gate ... See more keywords
Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties
Sign Up to like & getrecommendations! Published in 2018 at "RSC Advances"
DOI: 10.1039/c7ra12841j
Abstract: We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al2O3) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (Tdep). The Al2O3 gate insulator with a… read more here.
Keywords: thin film; gate insulator; gate; hydrogen ... See more keywords
Low-temperature fabrication of solution-processed hafnium oxide gate insulator films using a thermally purified solution process
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Materials Chemistry C"
DOI: 10.1039/c8tc00899j
Abstract: We proposed a simple method, a thermally purified solution (TPS) process, to lower the fabrication temperature of solution-processed hafnium oxide (HfOx) gate insulator films. The TPS process is proceeded by transferring thermal energy to the… read more here.
Keywords: solution processed; hfox; process; solution ... See more keywords
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2722002
Abstract: This letter reports an E-mode GaN MIS-HEMT using a composite La2O3/HfO2 gate insulator for power device applications. The composite dielectric formed an amorphous LaHfOx layer after post-deposition annealing. The GaN MIS-HEMT with amorphous LaHfOx gate… read more here.
Keywords: gan mis; sub sub; sub; gate insulator ... See more keywords
Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis
Sign Up to like & getrecommendations! Published in 2020 at "Nanomaterials"
DOI: 10.3390/nano10050976
Abstract: We report the impact of yttrium oxide (YOx) passivation on the zinc oxide (ZnO) thin film transistor (TFT) based on Al2O3 gate insulator (GI). The YOx and ZnO films are both deposited by spray pyrolysis… read more here.
Keywords: al2o3 gate; stability; zno; gate insulator ... See more keywords
The Effect of Bake Temperature on SU-8 Gate Insulator of IGZO Thin Film Transistor
Sign Up to like & getrecommendations! Published in 2018 at "Journal of the Korean Physical Society"
DOI: 10.3938/jkps.73.297
Abstract: SU-8 photoresist was applied to the gate insulator of a-IGZO TFT. The hard bake temperature of SU-8 is important and was varied from 95 to 185 °C. The FTIR showed that hard-bake temperature higher than… read more here.
Keywords: bake temperature; insulator igzo; bake; gate insulator ... See more keywords