Self-aligned gate-last process for quantum-well InAs transistor on insulator
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DOI: 10.1016/j.mee.2018.01.030
Abstract: Abstract This paper presents a promising technology to make quantum-well InAs transistors on SiO2/Si substrate by using a self-aligned gate-last fabrication technique. The full self-aligned fabrication process is demonstrated, and the fabricated device is characterized.… read more here.
Keywords: gate last; self aligned; well inas; aligned gate ... See more keywords