Influence of gate leakage current induced shot noise on the Minimum Noise Figure of InAlAs/InGaAs double-gate HEMT
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.02.026
Abstract: Abstract In this paper, the influence of hot electron injection induced gate leakage current on the noise performance of InAlAs/InGaAs double-gate HEMT has been studied following a comprehensive analytical approach. The presence of two gates… read more here.
Keywords: double gate; gate leakage; gate; noise ... See more keywords
Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.02.011
Abstract: Abstract In this paper, we present a completely analytical model for the 2DEG concentration in AlGaN/GaN HEMTs as a function of gate bias, considering the donor-like trap states present at the metal/AlGaN interface to be… read more here.
Keywords: 2deg concentration; gan hemts; algan gan; gate leakage ... See more keywords
Gate leakage currents induced by thermal fluctuation on two-dimensional electron gas in AlGaN/GaN high-electron-mobility transistors
Sign Up to like & getrecommendations! Published in 2017 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2016.12.051
Abstract: Abstract The effect of thermal fluctuation of two-dimensional electron gases (2DEGs) on the leakage in AlGaN/GaN heterostructure-based high-electron-mobility transistors was investigated. Results indicate that the gate leakage current in AlGaN/GaN heterojunction was enhanced by the… read more here.
Keywords: thermal fluctuation; electron; algan gan; gate leakage ... See more keywords
Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4974959
Abstract: The gate leakage current mechanism of AlGaN/GaN Schottky barrier diodes (SBDs) and high-electron-mobility transistors (HEMTs) with sputtered TiN is systematically investigated. The reverse leakage current (JR) of TiN SBDs increases exponentially with the increase of… read more here.
Keywords: algan gan; tin; gate leakage; electron ... See more keywords
Gate-Leakage Current Mechanisms in Silicon Field-Effect Solar Cells
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DOI: 10.1109/jphotov.2020.2992353
Abstract: Field-effect solar cells (FESCs) are increasingly attractive for 2-D heterojunction solar cells and especially for gate-tunable Schottky-junction solar cells. A prerequisite for applying FESCs is that the gate-leakage (GL) power must be far less than… read more here.
Keywords: current mechanisms; solar cells; effect solar; mechanisms silicon ... See more keywords
Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2723932
Abstract: Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN metal insulator semiconductor high-electron-mobility transistors (MIS-HEMTs) with SiNx as gate dielectric have been investigated. It is found that the conduction in the reverse gate bias is due to… read more here.
Keywords: alinn gan; mis hemts; gate leakage; hemts ... See more keywords
Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Express"
DOI: 10.7567/apex.11.061501
Abstract: We performed first-principle calculations to investigate the effect of incorporation of N atoms into Al2O3 gate dielectrics. Our calculations show that the defect levels generated by VO in Al2O3 are the origin of the stress-induced… read more here.
Keywords: negative fixed; atoms al2o3; gate leakage; fixed charge ... See more keywords