3-D Simulation of Novel High Performance of Nano-Scale Dual Gate Fin-FET Inserting the High-K Dielectric TiO2 at 5 Nm Technology
Sign Up to like & getrecommendations! Published in 2019 at "Silicon"
DOI: 10.1007/s12633-019-00220-7
Abstract: The evolution of integrated circuit is based on the miniaturization of dimension in the transistor Mosfet, this reduction causes the undesirable effect: short channel effects (SCE) and hot carrier effect, the principal goal is to… read more here.
Keywords: high dielectric; gate length; gate; effect ... See more keywords
Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm
Sign Up to like & getrecommendations! Published in 2021 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2021.153774
Abstract: Abstract The dc and high frequency performances of Al composition Graded Channel AlGaN/GaN high electron mobility transistor on GaN substrate was investigated and compared with Conventional AlGaN/GaN HEMT. The high frequency characteristics were measured on… read more here.
Keywords: algan gan; gan hemt; drain current; graded channel ... See more keywords
Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?
Sign Up to like & getrecommendations! Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c05229
Abstract: Single-walled carbon nanotubes (CNTs) have been considered as a promising semiconductor to construct transistors and integrated circuits in the future owing to their ultrathin channel thickness and ultrahigh injection velocity. Although a 5 nm gate-length… read more here.
Keywords: length; sub gate; gate length; performance ... See more keywords
A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2019.2909751
Abstract: We fabricated a field-effect transistor (FET) with a gate length of 21 nm whose channel material is a ${c}$ -axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO). A CAAC-IGZO FET with a gate length of 21 nm has… read more here.
Keywords: fet gate; memory; gate length; axis aligned ... See more keywords
Limitations on Lateral Nanowire Scaling Beyond 7-nm Node
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2016.2629420
Abstract: In this letter, we have studied the impact on lateral nanowire transistor's (LNW) performance of reducing the wire diameter from 7 nm to 5 nm. As technology scaling continues, the LNW device size is scaled… read more here.
Keywords: gate length; wire diameter; lateral nanowire; diameter ... See more keywords
Assessment of 2-D Transition Metal Dichalcogenide FETs at Sub-5-nm Gate Length Scale
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2016.2644719
Abstract: 2-D transition metal dichalcogenide (TMDC) FETs are promising devices for scaling beyond end of silicon CMOS nanoelectronics. By solving the quantum transport equation self-consistently with the Poisson equation, we explore the performance potential of TMDC… read more here.
Keywords: length; gate length; transition metal; metal dichalcogenide ... See more keywords
Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2786144
Abstract: This paper utilizes electrical analyses and a study of physical mechanisms to investigate metal gate structure-dependent performance in amorphous InGaZnO (a-IGZO) thin-film transistors. The effects of different shielding areas between the IGZO layer and metal… read more here.
Keywords: metal gate; light illumination; gate length; gate ... See more keywords