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Published in 2018 at "Journal of Materials Engineering and Performance"
DOI: 10.1007/s11665-018-3144-x
Abstract: The tunnel field effect transistor (TFET) is considered to be a promising alternative device for future low-power VLSI circuits due to its steep subthreshold slope, low leakage current and its efficient performance at low supply…
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Keywords:
tfet;
modeling dual;
dual gate;
gate material ... See more keywords