Performance investigation of heterogeneous gate dielectric-gate metal engineered–gate all around-tunnel FET for RF applications
Sign Up to like & getrecommendations! Published in 2017 at "Microsystem Technologies"
DOI: 10.1007/s00542-016-3143-5
Abstract: In this work, the effect of gate metal work function engineering (GME), gate bias and drain bias on the bias dependent parasitic capacitances has been studied. Further, RF Figure of merits (FOMs) such as power… read more here.
Keywords: engineered gate; gate metal; metal engineered; gate ... See more keywords
Investigation of electrical/analog performance and reliability of gate metal and source pocket engineered DG-TFET
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DOI: 10.1007/s00542-020-04845-2
Abstract: Although Tunnel Field Effect Transistors (TFET) offer low leakage current and allow good scalability, but they suffer from low ON-current. Present research paper focuses on the designing of an industry ready TFET that can operate… read more here.
Keywords: gate metal; gme tfet; reliability; tfet ... See more keywords
Improvement of the Al2O3/NO2/H-diamond MOS FET by using Au gate metal and its analysis
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DOI: 10.1016/j.diamond.2018.12.017
Abstract: Abstract By using Au as the gate metal contact, performance of NO2-doped H-diamond field effect transistor (FET) has been improved. We fabricated and compared Al2O3 layer deposited, NO2-doped H-diamond FETs with Au, Al and Ti… read more here.
Keywords: metal; fet; using gate; mos ... See more keywords