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Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3040239
Abstract: The tri-gate MOSFET is a vertical power transistor with multiple sub-micron FinFET channels. The FinFET structure increases the current-carrying width of the MOS inversion layer without increasing the device area, thereby reducing the specific channel…
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Keywords:
vertical power;
tri gate;
gate mosfet;
power ... See more keywords
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Published in 2019 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2019.2910197
Abstract: In this paper, a physics-based threshold voltage model of symmetrical double gate (DG) MOSFET, including the random dopants in the channel is presented. The model is derived from the solution of 2-D Poisson’s equation and…
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Keywords:
gate mosfet;
threshold voltage;
model;
inline formula ... See more keywords