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Published in 2023 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2023.3268673
Abstract: This letter reveals the effect of the reverse-recovery current of a PIN diode on the surge and gate-noise voltages of an insulated-gate bipolar transistor (IGBT) in an inverter. Theoretical analysis reveals that the $di/dt$ of…
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Keywords:
surge;
analysis;
recovery current;
gate noise ... See more keywords