LAUSR

About LAUSR
Donate
Contact Us

Follow us:

You are not signed in:

Sign Up!


   Articles with "gate oxide" as a keyword



Electronic Doping and Enhancement of n‐Channel Polycrystalline OFET Performance through Gate Oxide Modifications with Aminosilanes

Sign Up to like & get
recommendations! Published in 2021 at "Advanced Materials Interfaces"

DOI: 10.1002/admi.202100320

Abstract: Self‐assembled monolayers (SAMs) are widely employed in organic field‐effect transistors to modify the surface energy, surface roughness, film growth kinetics, and electrical surface potential of the gate oxide to control the device's operating voltage. In… read more here.

Keywords: gate oxide; electronic doping; doping enhancement; enhancement channel ... See more keywords

Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors

Sign Up to like & get
recommendations! Published in 2023 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.202201110

Abstract: Tunable multilevel gate oxide capacitance and flat‐band voltage shift characteristics in double‐floating‐gate metal–oxide–semiconductor (DFG‐MOS) capacitors are investigated for non‐volatile memory and programmable logic device applications. The DFG‐MOS capacitor with the structure of Ag(control gate)/CeO2(upper control… read more here.

Keywords: gate oxide; flat band; band voltage; gate ... See more keywords

Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs

Sign Up to like & get
recommendations! Published in 2019 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2019.01.016

Abstract: Abstract In previous works, an alternative gate oxide configuration, based on a boron treatment, was proposed in order to enhance the SiO2/SiC interface quality, enabling high channel mobility n-channel 4H-SiC lateral MOSFETs. In this paper… read more here.

Keywords: mobility; boron; treatment; sic mosfets ... See more keywords

Impact of nonuniform gate oxide shape on TFET performance: A reliability issue

Sign Up to like & get
recommendations! Published in 2019 at "Physica E: Low-dimensional Systems and Nanostructures"

DOI: 10.1016/j.physe.2018.07.001

Abstract: Abstract Gate dielectric scaling is a vital key to improve the steep switching characteristics of TFETs. However, scaling down the oxide thickness causes high gate leakage current that cannot be neglected. The impact of the… read more here.

Keywords: nonuniform gate; shape; performance; gate ... See more keywords
Photo from wikipedia

Self-assembled dipoles of o-carborane on gate oxide tuning charge carriers in organic field effect transistors

Sign Up to like & get
recommendations! Published in 2021 at "Journal of Materials Chemistry C"

DOI: 10.1039/d1tc02810c

Abstract: A novel self-assembled monolayer of o-carborane on gate oxide not only realized p-channel organic field effect transistors with low threshold voltage and high field effect mobility, but also enabled ambipolar charge transport in a typical… read more here.

Keywords: field; self assembled; field effect; gate oxide ... See more keywords

Real-time current-sensing feedback system for compensating process–voltage–temperature variations of display using double-gate oxide TFT

Sign Up to like & get
recommendations! Published in 2017 at "Electronics Letters"

DOI: 10.1049/el.2016.3872

Abstract: The shift register of display panel employing double-gate oxide thin-film transistors (TFTs) to compensate the severe degradation of the threshold voltage (V TH) is proposed. In double-gate TFTs, V TH is controlled by adjusting top-gate… read more here.

Keywords: double gate; voltage; system; gate ... See more keywords

On the "intrinsic" breakdown of thick gate oxide.

Sign Up to like & get
recommendations! Published in 2022 at "Journal of applied physics"

DOI: 10.1063/5.0118081

Abstract: The thick gate oxide breakdown mechanism has become an important topic again due to the rising demand for power electronics. The failure of the percolation model in explaining the observed Weibull shape factor, β, seriously… read more here.

Keywords: gate oxide; thick oxides; breakdown thick; thick gate ... See more keywords

NiOx gate oxide for enhanced thermal stability of threshold voltage in GaN MIS-HEMTs up to 400 °C

Sign Up to like & get
recommendations! Published in 2025 at "Applied Physics Letters"

DOI: 10.1063/5.0251561

Abstract: This study demonstrates the high-temperature operation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) based on nickel oxide (NiOx) as an intermediate gate oxide, achieving stable performance up to 400 °C. Compared to the control sample… read more here.

Keywords: gan mis; stability; gate oxide; gate ... See more keywords

A novel four-terminal SiC MOSFET with improved single-event effect performance

Sign Up to like & get
recommendations! Published in 2025 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/aded2c

Abstract: This paper proposes a novel Four-Terminal SiC MOSFET (4 T-MOSFET) with excellent radiation resistance characteristics and flexible operable modes for the first time. The added control electrode can not only reduce the drain voltage coupling… read more here.

Keywords: single event; sic mosfet; novel four; gate oxide ... See more keywords

Detecting and Preventing Gate Oxide Plasma Damage During PECVD Carbon Deposition Through Surface Photovoltage Measurements

Sign Up to like & get
recommendations! Published in 2017 at "IEEE Transactions on Semiconductor Manufacturing"

DOI: 10.1109/asmc.2016.7491161

Abstract: For an advanced NAND flash memory device, there is a failure mechanism known as “blown gate oxide” that is commonly sourced to the plasma-enhanced chemical vapor deposition (PECVD) amorphous carbon deposition step. It has been… read more here.

Keywords: photovoltage measurements; carbon deposition; deposition; surface photovoltage ... See more keywords

Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering

Sign Up to like & get
recommendations! Published in 2024 at "IEEE Electron Device Letters"

DOI: 10.1109/led.2024.3363131

Abstract: Previous studies have reported the formation of n+ regions in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) upon doping hydrogen (H) to the AOS channel layer from the deposition atmosphere of interlayer dielectrics (ILD) e.g.… read more here.

Keywords: oxide engineering; bottom gate; thin film; gate oxide ... See more keywords