Electronic Doping and Enhancement of n‐Channel Polycrystalline OFET Performance through Gate Oxide Modifications with Aminosilanes
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202100320
Abstract: Self‐assembled monolayers (SAMs) are widely employed in organic field‐effect transistors to modify the surface energy, surface roughness, film growth kinetics, and electrical surface potential of the gate oxide to control the device's operating voltage. In… read more here.
Keywords: gate oxide; electronic doping; doping enhancement; enhancement channel ... See more keywords
Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202201110
Abstract: Tunable multilevel gate oxide capacitance and flat‐band voltage shift characteristics in double‐floating‐gate metal–oxide–semiconductor (DFG‐MOS) capacitors are investigated for non‐volatile memory and programmable logic device applications. The DFG‐MOS capacitor with the structure of Ag(control gate)/CeO2(upper control… read more here.
Keywords: gate oxide; flat band; band voltage; gate ... See more keywords
Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.01.016
Abstract: Abstract In previous works, an alternative gate oxide configuration, based on a boron treatment, was proposed in order to enhance the SiO2/SiC interface quality, enabling high channel mobility n-channel 4H-SiC lateral MOSFETs. In this paper… read more here.
Keywords: mobility; boron; treatment; sic mosfets ... See more keywords
Impact of nonuniform gate oxide shape on TFET performance: A reliability issue
Sign Up to like & getrecommendations! Published in 2019 at "Physica E: Low-dimensional Systems and Nanostructures"
DOI: 10.1016/j.physe.2018.07.001
Abstract: Abstract Gate dielectric scaling is a vital key to improve the steep switching characteristics of TFETs. However, scaling down the oxide thickness causes high gate leakage current that cannot be neglected. The impact of the… read more here.
Keywords: nonuniform gate; shape; performance; gate ... See more keywords
Self-assembled dipoles of o-carborane on gate oxide tuning charge carriers in organic field effect transistors
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Materials Chemistry C"
DOI: 10.1039/d1tc02810c
Abstract: A novel self-assembled monolayer of o-carborane on gate oxide not only realized p-channel organic field effect transistors with low threshold voltage and high field effect mobility, but also enabled ambipolar charge transport in a typical… read more here.
Keywords: field; self assembled; field effect; gate oxide ... See more keywords
Real-time current-sensing feedback system for compensating process–voltage–temperature variations of display using double-gate oxide TFT
Sign Up to like & getrecommendations! Published in 2017 at "Electronics Letters"
DOI: 10.1049/el.2016.3872
Abstract: The shift register of display panel employing double-gate oxide thin-film transistors (TFTs) to compensate the severe degradation of the threshold voltage (V TH) is proposed. In double-gate TFTs, V TH is controlled by adjusting top-gate… read more here.
Keywords: double gate; voltage; system; gate ... See more keywords
On the "intrinsic" breakdown of thick gate oxide.
Sign Up to like & getrecommendations! Published in 2022 at "Journal of applied physics"
DOI: 10.1063/5.0118081
Abstract: The thick gate oxide breakdown mechanism has become an important topic again due to the rising demand for power electronics. The failure of the percolation model in explaining the observed Weibull shape factor, β, seriously… read more here.
Keywords: gate oxide; thick oxides; breakdown thick; thick gate ... See more keywords
Detecting and Preventing Gate Oxide Plasma Damage During PECVD Carbon Deposition Through Surface Photovoltage Measurements
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Semiconductor Manufacturing"
DOI: 10.1109/asmc.2016.7491161
Abstract: For an advanced NAND flash memory device, there is a failure mechanism known as “blown gate oxide” that is commonly sourced to the plasma-enhanced chemical vapor deposition (PECVD) amorphous carbon deposition step. It has been… read more here.
Keywords: photovoltage measurements; carbon deposition; deposition; surface photovoltage ... See more keywords
Impact of Interface Trap Charges on Analog/RF and Linearity Performances of Dual-Material Gate-Oxide-Stack Double-Gate TFET
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2020.2984669
Abstract: This paper investigates the impact of different interface trap charges (ITCs) on dual-material gate-oxide-stack double-gate TFET (DMGOSDG-TFET) by introducing localized charges (donor/acceptor) at the interface of semiconductor/insulator. For this, we have observed the effects of… read more here.
Keywords: tfet; material gate; dual material; gate ... See more keywords
An Online Condition Monitoring Method for IGBT Gate Oxide Degradation Based on the Gate Current in Miller Plateau
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2022.3210581
Abstract: The reliability of power converters is one of the important issues due to the widespread applications of power electronics in many industrial fields. Accordingly, condition monitoring (CM) methods for the assessment of the health of… read more here.
Keywords: gate oxide; condition monitoring; method; gate ... See more keywords
Online Condition Monitoring of Power MOSFET Gate Oxide Degradation Based on Miller Platform Voltage
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2016.2602323
Abstract: The condition monitoring problem of power devices is significant for diagnostics and prognostics of a switched-mode power supply (SMPS) system. For power mosfet, the gate oxide degradation often occurs in various applications. However, there is… read more here.
Keywords: condition monitoring; gate oxide; oxide degradation; power ... See more keywords