The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
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DOI: 10.1080/10420150.2019.1703114
Abstract: ABSTRACT An anomalous total dose effect that the wider channel device is more susceptible to total ionizing dose than the narrow one is observed with the 0.13 µm H-gate partially depleted silicon-on-insulator technology. The measured results… read more here.
Keywords: channel; total ionizing; ionizing dose; gate partially ... See more keywords