GaTe-Sb2Te3 thin-films phase change characteristics.
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DOI: 10.1364/ol.386779
Abstract: A radio frequency magnetron co-sputtering technique exploiting GaTe and ${\rm Sb}_2 {\rm Te}_3$Sb2Te3 targets was used for the fabrication of Ga-Sb-Te thin films. Prepared layers cover broad region of chemical composition (${\sim}{10.0 {-} 26.3}\,\, {\rm… read more here.
Keywords: thin films; phase change; gate sb2te3; films phase ... See more keywords