Impact of WFV on electrical parameters due to high-k/metal gate in SiGe channel tunnel FET
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DOI: 10.1016/j.mee.2019.04.024
Abstract: Abstract This paper presented findings on statistical impact of mole fraction (x) on threshold voltage, on current, and off current in high-k/metal gate SiGe channel Tunnel FET (TFET) due to work function variability (WFV) of… read more here.
Keywords: metal gate; gate; high metal; grain ... See more keywords