Stabilization of top-gate p-SnO transistors via ultrathin Al2O3 interlayers for hysteresis-free operation
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DOI: 10.1039/d5tc00399g
Abstract: Hysteresis-free and stable operation achieved in top-gate SnO TFTs by inserting an Al2O3 interlayer that protects the surface of the metastable SnO channel. read more here.
Keywords: operation; hysteresis free; gate sno; top gate ... See more keywords