Stacked Assembly of SiC Cascode Using Buried Gate Static Induction Transistor
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DOI: 10.1109/tcpmt.2020.3022083
Abstract: A 650-V and 10-A silicon carbide (SiC) stacked cascode assembly has been proposed and demonstrated, in which a low-voltage Si-MOSFET (LV Si-MOSFET) is stacked on a high-voltage SiC buried gate static induction transistor (HV SiC-BGSIT).… read more here.
Keywords: cascode; induction transistor; gate static; static induction ... See more keywords