Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.2991164
Abstract: We investigated the performances of GaN junctionless fin-shaped field-effect transistors (FinFETs) with two different types of gate structures; overlapped- and partially covered-gate. DC, low-frequency noise (LFN), and pulsed I-V characterization measurements were performed and analyzed… read more here.
Keywords: tex math; gan junctionless; inline formula; gate structure ... See more keywords
Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2024.3478091
Abstract: In this article, a lateral AlGaN/GaN high-electron-mobility avalanche-transit-time (HEMATT) transistor based on the gate-structure (G-HEMATT) is first demonstrated. The presence of the gate changes the avalanche generation location and alters the current path to form… read more here.
Keywords: avalanche transit; hematt; gate; gate structure ... See more keywords