Performance Improvement Induced by Metal Gate Undercut for Ring Oscillator
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DOI: 10.1109/led.2023.3264916
Abstract: The performance of 101-stage ring oscillator is effectively improved by the undercut process of metal gate for 28 nm high-k first metal gate-last planar CMOS technology. Using a simple over-etch process after dummy poly-Si gate… read more here.
Keywords: metal gate; gate undercut; gate; ring oscillator ... See more keywords