Sign Up to like & get
recommendations!
3
Published in 2023 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2023.3264916
Abstract: The performance of 101-stage ring oscillator is effectively improved by the undercut process of metal gate for 28 nm high-k first metal gate-last planar CMOS technology. Using a simple over-etch process after dummy poly-Si gate…
read more here.
Keywords:
metal gate;
gate undercut;
gate;
ring oscillator ... See more keywords