Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
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DOI: 10.1109/ted.2020.3021996
Abstract: We have demonstrated, for the first time, a surrounding gate vertical-channel field-effect transistor (FET) with a gate length of 40 nm by introducing back-end-of-line (BEOL) process-compatible oxide semiconductor (OS) In-Al-Zn-O as a channel material. Fabricated… read more here.
Keywords: fet; vertical channel; gate vertical; surrounding gate ... See more keywords