Design and analysis of circular sheet junctionless double gate vertical nanotube (CSJL-DG-VNT) FET for DC/Analog/RF applications: device to circuit implementation
Sign Up to like & getrecommendations! Published in 2024 at "Physica Scripta"
DOI: 10.1088/1402-4896/ad7991
Abstract: This paper investigates the influence of geometrical variations on the performance characteristics of a novel circular sheet junctionless double gate vertical nanotube (CSJL-DG-VNT) FET through 3D numerical simulations at sub-5nm technology node. Initially, the proposed… read more here.
Keywords: circular sheet; junctionless double; double gate; vertical nanotube ... See more keywords
Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3021996
Abstract: We have demonstrated, for the first time, a surrounding gate vertical-channel field-effect transistor (FET) with a gate length of 40 nm by introducing back-end-of-line (BEOL) process-compatible oxide semiconductor (OS) In-Al-Zn-O as a channel material. Fabricated… read more here.
Keywords: fet; vertical channel; gate vertical; surrounding gate ... See more keywords