Controlling ambipolarity with improved RF performance by drain/gate work function engineering and using high $$\kappa $$κ dielectric material in electrically doped TFET: proposal and optimization
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-017-1019-2
Abstract: This article proposes a novel device structure of electrically doped tunnel FET with drain/gate work function engineering by using hetero-dielectric material for the suppression of ambipolar behavior with improved DC and RF characteristics. For this,… read more here.
Keywords: work; drain; dielectric material; gate work ... See more keywords
The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2O3 Metal–Semiconductor Field-Effect Transistors
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DOI: 10.3390/ma15030913
Abstract: We present technology computer aided design (TCAD) results for wide band-gap Sn-doped α-Ga2O3 metal–semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electrical characteristics is demonstrated… read more here.
Keywords: gate work; gap; effect; work function ... See more keywords