Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination
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DOI: 10.1016/j.spmi.2017.12.026
Abstract: Abstract We conducted a numerical analysis on high-K dielectric passivated AlGaN/GaN Schottky barrier diodes (HPG-SBDs) with a gated edge termination (GET). The reverse blocking characteristics were significantly enhanced without the stimulation of any parasitic effect… read more here.
Keywords: schottky barrier; gated edge; gan schottky; numerical analysis ... See more keywords