Humidity-Dependent Synaptic Plasticity for Proton Gated Oxide Synaptic Transistor
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DOI: 10.1109/led.2017.2723917
Abstract: Indium-tin-oxide synaptic transistors using proton conducting nanogranular phosphorosilicate glass as gate dielectric are fabricated. Humidity-dependent proton gating behaviors are observed. Moreover, synaptic plasticities are mimicked on the proton gated oxide synaptic transistors. Interestingly, enhanced synaptic… read more here.
Keywords: humidity dependent; proton; gated oxide; oxide synaptic ... See more keywords