Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS2 Transistor
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DOI: 10.1002/adfm.202100625
Abstract: In this study, high‐performance few‐layered ReS2 field‐effect transistors (FETs), fabricated with hexagonal boron nitride (h‐BN) as top/bottom dual gate dielectrics, are presented. The performance of h‐BN dual gated ReS2 FET having a trade‐off of performance… read more here.
Keywords: dual gated; performance; modeling understanding; performance dual ... See more keywords