Wide Electrical Tunability of the Valley Splitting in a Doubly Gated Silicon-on-Insulator Quantum Well.
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DOI: 10.1021/acs.nanolett.5c03049
Abstract: The valley splitting of 2D electrons in doubly gated silicon-on-insulator quantum wells is studied by low temperature transport measurements under magnetic fields. At the buried thermal-oxide SiO2 interface, the valley splitting increases as a function… read more here.
Keywords: valley splitting; silicon insulator; valley; gated silicon ... See more keywords