A Sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor Based on ZnO/AgNW Schottky Contact
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DOI: 10.1109/led.2021.3120928
Abstract: Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW)… read more here.
Keywords: agnw; gated vertical; vertical field; sup ... See more keywords