LAUSR

Chemical Gating of a Weak Topological Insulator: Bi14Rh3I9.

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0 Published in 2017 at "Nano letters"

DOI: 10.1021/acs.nanolett.7b03001

Abstract: The compound Bi14Rh3I9 has recently been suggested as a weak three-dimensional topological insulator on the basis of angle-resolved photoemission and scanning-tunneling experiments in combination with density functional (DF) electronic structure calculations. These methods unanimously support… read more here.

Keywords: insulator bi14rh3i9; gating weak; chemical gating; insulator ... See more keywords