Performance Improvement of Heterojunction Double Gate TFET with Gaussian Doping
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DOI: 10.1007/s12633-020-00736-3
Abstract: A new Ge/SiGe heterojunction double-gate tunnel field effect transistor (DGT) model with hetero dielectric gate and Gaussian doping drain region is investigated for the first time. The introduction of heterojunction with hetero dielectric will reduce… read more here.
Keywords: double gate; frequency; gaussian doping; heterojunction double ... See more keywords