Origin of the anomalous trends in band alignment of GaX/ZnGeX2 (X = N, P, As, Sb) heterojunctions
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DOI: 10.1088/1674-4926/40/4/042102
Abstract: Utilizing first-principles band structure method, we studied the trends of electronic structures and band offsets of the common-anion heterojunctions GaX/ZnGeX2 (X = N, P, As, Sb). Here, ZnGeX2 can be derived by atomic transmutation of… read more here.
Keywords: origin anomalous; gax; zngex2; band ... See more keywords