Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology
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DOI: 10.1016/j.sse.2016.10.026
Abstract: Abstract We propose a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28 nm UTBB FD-SOI high-k metal gate technology. By modifying the combination of the diode and transistor gate stacks, the robustness… read more here.
Keywords: protection; gdnmos; esd protection; soi ... See more keywords