Comparison study of temperature dependent direct/indirect bandgap emissions of Ge1-x-ySixSny and Ge1-ySny grown on Ge buffered Si
Sign Up to like & getrecommendations! Published in 2019 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2019.01.022
Abstract: Abstract Temperature-dependent photoluminescence (PL) of two sets of ternary samples with fixed tin concentrations of ~5.2% (Ge0.924Si0.024Sn0.052, and Ge0.911Si0.036Sn0.053) and ~7.3% (Ge0.900Si0.027Sn0.073, and Ge0.888Si0.04Sn0.072) were measured along with their binary counterparts (Ge0.948Sn0.052 and Ge0.925Sn0.075). The… read more here.
Keywords: comparison study; ge0; indirect bandgap; temperature ... See more keywords
Enhanced Thermoelectric Performance in Ternary Skutterudite Co(Ge0.5Te0.5)3 via Band Engineering.
Sign Up to like & getrecommendations! Published in 2022 at "Inorganic chemistry"
DOI: 10.1021/acs.inorgchem.1c03947
Abstract: We report the phase evolution and thermoelectric properties of a series of Co(Ge0.5Te0.5)3-xSbx (x = 0-0.20) compositions synthesized by mechanical alloying. Pristine ternary Co(Ge0.5Te0.5)3 skutterudite crystallizes in the rhombohedral symmetry (R3̅), and Sb doping induces… read more here.
Keywords: skutterudite; ge0; performance ternary; ge0 5te0 ... See more keywords
Influence of GeP precipitates on the thermoelectric properties of P-type GeTe and Ge0.9−xPxSb0.1Te compounds
Sign Up to like & getrecommendations! Published in 2018 at "CrystEngComm"
DOI: 10.1039/c8ce01134f
Abstract: Germanium telluride (GeTe) is a very well known IV–VI group semiconducting material with the advantageous property of showing metallic conduction, which materializes from its superior carrier concentration (n) (high number of Ge vacancies). A systematic… read more here.
Keywords: thermoelectric properties; microscopy; ge0; xpxsb0 1te ... See more keywords