Structural and optical evolution of compressively strained Ge0.965Sn0.035 films on silicon undergoing microwave annealing
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DOI: 10.1088/1361-6641/ade820
Abstract: Group-IV GeSn alloys have recently attracted considerable attention in silicon photonics owing to their enhanced direct bandgap nature and tunable bandgap energy. However, the performance of GeSn-based photonic devices is strongly dependent on both the… read more here.
Keywords: 035 films; ge0 965sn0; 965sn0 035; microwave annealing ... See more keywords