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   Articles with "ge2sb2te5" as a keyword



Optimized Low‐Loss Ge2Sb2Te5 Superlattice: Design, Fabrication and Application

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recommendations! Published in 2024 at "Advanced Optical Materials"

DOI: 10.1002/adom.202402092

Abstract: Optical phase change materials (OPCMs) hold significant promise in photonic integrated circuits (PICs) due to their non‐volatile modulation capabilities through phase transition. Recently, integrating OPCMs with silicon devices has been leveraged to achieve multi‐level modulation… read more here.

Keywords: superlattice; loss; ge2sb2te5; low loss ... See more keywords

Molecular beam epitaxial growth of oriented and uniform Ge2Sb2Te5 nanoparticles with compact dimensions

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recommendations! Published in 2017 at "Journal of Nanoparticle Research"

DOI: 10.1007/s11051-017-3759-0

Abstract: The scaling-down of phase change memory cell is critical to achieve high-performance and high-density memory devices. Herein, we report that Ge2Sb2Te5 nanoparticles along the [1 1 1] direction were synthesized without templates or etching in… read more here.

Keywords: ge2sb2te5 nanoparticles; beam epitaxial; molecular beam; ge2sb2te5 ... See more keywords

Optothermally controllable multiple high-order harmonics generation by Ge2Sb2Te5-mediated Fano clusters

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recommendations! Published in 2018 at "Optical Materials"

DOI: 10.1016/j.optmat.2018.07.026

Abstract: Abstract Substantial enhancement of nonlinear high-order harmonics generation based on Fano-resonant nanostructures has received growing interest due to their promising potential for developing integrated and advanced next-generation nanophotonic devices. In this study, going beyond conventional… read more here.

Keywords: harmonics generation; generation; order harmonics; high order ... See more keywords
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Metastable Stacking-Polymorphism in Ge2Sb2Te5.

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recommendations! Published in 2017 at "Inorganic chemistry"

DOI: 10.1021/acs.inorgchem.7b01970

Abstract: Metastable rocksalt structured Ge2Sb2Te5 is the most widely used phase-change material for data storage, yet the atomic arrangements of which are still under debate. In this work, we have proposed metastable stacking-polymorphism in cubic Ge2Sb2Te5… read more here.

Keywords: stacking polymorphism; cubic ge2sb2te5; polymorphism ge2sb2te5; ge2sb2te5 ... See more keywords

Impact of disorder on optical reflectivity contrast of epitaxial Ge2Sb2Te5 thin films

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recommendations! Published in 2018 at "CrystEngComm"

DOI: 10.1039/c8ce00534f

Abstract: The formation of periodically spaced vacancy layers within the metastable phase of Ge–Sb–Te based phase-change materials has recently gained a lot of attention since associated electron delocalization effects induce an insulator–metal transition. In order to… read more here.

Keywords: phase; optical reflectivity; thin films; ge2sb2te5 thin ... See more keywords

Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices

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recommendations! Published in 2018 at "Applied Physics Letters"

DOI: 10.1063/1.5053713

Abstract: High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective doping scheme… read more here.

Keywords: change; improving performance; nickel doping; performance ge2sb2te5 ... See more keywords

In situ TEM study of crystallization and chemical changes in an oxidized uncapped Ge2Sb2Te5 film

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recommendations! Published in 2020 at "Journal of Applied Physics"

DOI: 10.1063/5.0023761

Abstract: Ge2Sb2Te5 (GST-225) has been the most used active material in nonvolatile phase-change memory devices. Understanding the kinetics and dynamics involved in crystallization is critical for the optimization of materials and devices. A GST-225 thin film… read more here.

Keywords: tem study; situ tem; crystallization; ge2sb2te5 ... See more keywords

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory

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recommendations! Published in 2024 at "Journal of Physics D: Applied Physics"

DOI: 10.1088/1361-6463/ad6a25

Abstract: This study investigates the phase-change properties of [Ge8Sb92 (25 nm)-Ge2Sb2Te5 (25 nm)]1 multilayer thin films, elucidating three distinct resistance states originating from two structural transitions: initial Sb precipitation and Ge2Sb2Te5-FCC crystallization, followed by Ge2Sb2Te5-FCC to… read more here.

Keywords: resistance; ge2sb2te5; ge8sb92 ge2sb2te5; phase change ... See more keywords

Impulse response of Ge2Sb2Te5-based ultrafast photodetector integrated with SOI waveguide

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recommendations! Published in 2019 at "Chinese Optics Letters"

DOI: 10.3788/col201917.100401

Abstract: The impulse response for a phase-change material Ge2Sb2Te5 (GST)-based photodetector integrated with a silicon-on-insulator (SOI) waveguide is simulated using finite difference time domain method. The current is calculated by solving the drift-diffusion model for short… read more here.

Keywords: impulse response; soi waveguide; gst; ge2sb2te5 ... See more keywords