Molecular beam epitaxial growth of oriented and uniform Ge2Sb2Te5 nanoparticles with compact dimensions
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Nanoparticle Research"
DOI: 10.1007/s11051-017-3759-0
Abstract: The scaling-down of phase change memory cell is critical to achieve high-performance and high-density memory devices. Herein, we report that Ge2Sb2Te5 nanoparticles along the [1 1 1] direction were synthesized without templates or etching in… read more here.
Keywords: ge2sb2te5 nanoparticles; beam epitaxial; molecular beam; ge2sb2te5 ... See more keywords
Optothermally controllable multiple high-order harmonics generation by Ge2Sb2Te5-mediated Fano clusters
Sign Up to like & getrecommendations! Published in 2018 at "Optical Materials"
DOI: 10.1016/j.optmat.2018.07.026
Abstract: Abstract Substantial enhancement of nonlinear high-order harmonics generation based on Fano-resonant nanostructures has received growing interest due to their promising potential for developing integrated and advanced next-generation nanophotonic devices. In this study, going beyond conventional… read more here.
Keywords: harmonics generation; generation; order harmonics; high order ... See more keywords
Metastable Stacking-Polymorphism in Ge2Sb2Te5.
Sign Up to like & getrecommendations! Published in 2017 at "Inorganic chemistry"
DOI: 10.1021/acs.inorgchem.7b01970
Abstract: Metastable rocksalt structured Ge2Sb2Te5 is the most widely used phase-change material for data storage, yet the atomic arrangements of which are still under debate. In this work, we have proposed metastable stacking-polymorphism in cubic Ge2Sb2Te5… read more here.
Keywords: stacking polymorphism; cubic ge2sb2te5; polymorphism ge2sb2te5; ge2sb2te5 ... See more keywords
Impact of disorder on optical reflectivity contrast of epitaxial Ge2Sb2Te5 thin films
Sign Up to like & getrecommendations! Published in 2018 at "CrystEngComm"
DOI: 10.1039/c8ce00534f
Abstract: The formation of periodically spaced vacancy layers within the metastable phase of Ge–Sb–Te based phase-change materials has recently gained a lot of attention since associated electron delocalization effects induce an insulator–metal transition. In order to… read more here.
Keywords: phase; optical reflectivity; thin films; ge2sb2te5 thin ... See more keywords
Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5053713
Abstract: High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective doping scheme… read more here.
Keywords: change; improving performance; nickel doping; performance ge2sb2te5 ... See more keywords
In situ TEM study of crystallization and chemical changes in an oxidized uncapped Ge2Sb2Te5 film
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/5.0023761
Abstract: Ge2Sb2Te5 (GST-225) has been the most used active material in nonvolatile phase-change memory devices. Understanding the kinetics and dynamics involved in crystallization is critical for the optimization of materials and devices. A GST-225 thin film… read more here.
Keywords: tem study; situ tem; crystallization; ge2sb2te5 ... See more keywords
Impulse response of Ge2Sb2Te5-based ultrafast photodetector integrated with SOI waveguide
Sign Up to like & getrecommendations! Published in 2019 at "Chinese Optics Letters"
DOI: 10.3788/col201917.100401
Abstract: The impulse response for a phase-change material Ge2Sb2Te5 (GST)-based photodetector integrated with a silicon-on-insulator (SOI) waveguide is simulated using finite difference time domain method. The current is calculated by solving the drift-diffusion model for short… read more here.
Keywords: impulse response; soi waveguide; gst; ge2sb2te5 ... See more keywords