Thermal-optical readout of multi-level thermal emissivity Ge2Sb2Te5 patterns
Sign Up to like & getrecommendations! Published in 2019 at "Materials Letters"
DOI: 10.1016/j.matlet.2019.126728
Abstract: Abstract Ge2Sb2Te5 thin film (100 nm) can be patterned with multi-level crystalline and thermal emissivity states using laser in large scale. Various patterns can be fabricated by tuning laser power and speed. X-ray diffraction (XRD) and… read more here.
Keywords: ge2sb2te5 thin; thermal emissivity; multi level; emissivity ... See more keywords
Impact of disorder on optical reflectivity contrast of epitaxial Ge2Sb2Te5 thin films
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DOI: 10.1039/c8ce00534f
Abstract: The formation of periodically spaced vacancy layers within the metastable phase of Ge–Sb–Te based phase-change materials has recently gained a lot of attention since associated electron delocalization effects induce an insulator–metal transition. In order to… read more here.
Keywords: phase; optical reflectivity; thin films; ge2sb2te5 thin ... See more keywords
Artificial Anisotropy in Ge2Sb2Te5 Thin Films after Femtosecond Laser Irradiation
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DOI: 10.3390/ma15103499
Abstract: Ge2Sb2Te5 (GST225) looks to be a promising material for rewritable memory devices due to its relatively easy processing and high optical and electrophysical contrast for the crystalline and amorphous phases. In the present work, we… read more here.
Keywords: femtosecond laser; artificial anisotropy; ge2sb2te5 thin; anisotropy ... See more keywords
Investigation of the Crystallization Characteristics of Intermediate States in Ge2Sb2Te5 Thin Films Induced by Nanosecond Multi-Pulsed Laser Irradiation
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DOI: 10.3390/nano12030536
Abstract: Laser pulses can be utilized to induce intermediate states of phase change materials between amorphous and crystalline phases, making phase change materials attractive and applicable for multi-level storage applications. In this paper, intermediate states of… read more here.
Keywords: ge2sb2te5 thin; thin films; multi; crystallization ... See more keywords